参数项参数值
参数项参数值
Forward Transconductance - Min530 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.9 V
TechnologySi
Id - Continuous Drain Current310 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time1.7 ns
MXHTS85412999
Transistor Type1 N-Channel
Typical Turn-Off Delay Time4.8 ns
KRHTS8541299000
Qg - Gate Charge810 pC
Package / CaseSOT-23-3
CNHTS8541210000
JPHTS8541290100
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Channel ModeEnhancement
Fall Time3.6 ns
TARIC8541290000
ImageON Semiconductor NTR5103NT1G
RoHS Details
Factory Pack Quantity3000
ManufacturerON Semiconductor
BrandON Semiconductor
Unit Weight0.000282 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET NFET SOT23 60V 310MA 2.5
Pd - Power Dissipation420 mW
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time1.2 ns
Moisture Sensitivity Level1 (Unlimited)