参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current9.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time7.5 ns
Rds On - Drain-Source Resistance23 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
Width2 mm
Height0.75 mm
Length2 mm
Qg - Gate Charge14 nC
Package / CaseMicroFET-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time3.7 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
SeriesFDMA410NZ
BrandON Semiconductor / Fairchild
Unit Weight0.001058 oz
RoHS Details
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDMA410NZ
Product CategoryMOSFET
Pd - Power Dissipation2.4 W
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
Vds - Drain-Source Breakdown Voltage20 V
TradenamePowerTrench
Number of Channels1 Channel
Rise Time3.9 ns