参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current13 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance9.3 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time210 ns
Width3.9 mm
Height1.75 mm
MXHTS85412999
Qg - Gate Charge96 nC
KRHTS8541299000
Package / CaseSO-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Channel ModeEnhancement
Fall Time92 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.004586 oz
BrandON Semiconductor / Fairchild
ImageON Semiconductor / Fairchild FDS6679AZ
Pd - Power Dissipation2.5 W
Product CategoryMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
Factory Pack Quantity2500
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
DescriptionMOSFET -30V P-Channel PowerTrench MOSFET
TradenamePowerTrench
Number of Channels1 Channel
Rise Time15 ns
Moisture Sensitivity Level1 (Unlimited)