参数项参数值
参数项参数值
ConfigurationDual
Forward Transconductance - Min2.3 S, 2.7 S
KRHTS8541299000
Vgs th - Gate-Source Threshold Voltage1.6 V, - 1.5 V
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current1.4 A, - 1.5 A
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Vgs - Gate-Source Voltage- 20 V, + 20 V
ImageInfineon Technologies BSL316CH6327XTSA1
Length3 mm
Height1.1 mm
Typical Turn-On Delay Time3.4 ns, 5 ns
DescriptionMOSFET SMALL SIGNAL+P-CH
Rds On - Drain-Source Resistance113 mOhms, 119 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time5.8 ns, 14.3 ns
Package / CaseTSOP-6
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Width1.5 mm
Factory Pack Quantity3000
Mounting StyleSMD/SMT
BrandInfineon Technologies
Product TypeMOSFET
ManufacturerInfineon
RoHS Details
TARIC8541290000
MXHTS85412999
Qg - Gate Charge600 pC, - 2.4 nC
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.000522 oz
Fall Time1 ns, 7.5 ns
CNHTS8541210000
Part # AliasesBSL316C H6327 SP001101010
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage30 V, - 30 V
Number of Channels2 Channel
Rise Time2.3 ns, 6.5 ns