RN2706JE(TE85L,F)

厂牌：Toshiba Semiconductor and Storage

包装：卷装 1

类目：元器件 > 分立器件 > 预偏置双极晶体管

编号：B000000006451

描述：Trans Digital BJT PNP 50V 100mA 200mW 5-Pin ESV T/R

商品参数

参数项参数值

Peak DC Collector Current100 mA

Collector- Base Voltage VCBO50 V

Collector- Emitter Voltage VCEO Max50 V

Continuous Collector Current100 mA

ConfigurationDual

Transistor PolarityPNP

Emitter- Base Voltage VEBO5 V

DC Collector/Base Gain hfe Min80

MXHTS85412101

KRHTS8541219000

Mounting StyleSMD/SMT

Package / CaseSMV-5

JPHTS8541210101

CAHTS8541210000

Minimum Operating Temperature- 55 C

Maximum Operating Frequency200 MHz

Maximum Operating Temperature+ 150 C

CNHTS8541210000

TARIC8541210000

RoHS Details

SubcategoryTransistors

PackagingReel

PackagingMouseReel

PackagingCut Tape

ImageToshiba RN2706JE(TE85L,F)

BrandToshiba

Product TypeBJTs - Bipolar Transistors - Pre-Biased

SeriesRN2706

ManufacturerToshiba

Factory Pack Quantity4000

Unit Weight0.000106 oz

USHTS8541210095

Product CategoryBipolar Transistors - Pre-Biased

DescriptionBipolar Transistors - Pre-Biased Gen Trans PNP x 2 ESV, -50V, -100A

Pd - Power Dissipation100 mW

Typical Resistor Ratio0.1

Typical Input Resistor4.7 kOhms