参数项参数值
参数项参数值
DC Current Gain hFE Max60 at 100 uA, 1 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Length3 mm
Height1 mm
QualificationAEC-Q101
PackagingCut Tape
PackagingMouseReel
PackagingReel
KRHTS8541219000
Minimum Operating Temperature- 65 C
ManufacturerNexperia
Factory Pack Quantity10000
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-23-3
BrandNexperia
DC Collector/Base Gain hfe Min60 at 100 uA, 1 V
TARIC8541210000
Maximum Operating Temperature+ 150 C
Width1.4 mm
Mounting StyleSMD/SMT
RoHS Details
ImageNexperia PMBT3904,235
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT TRANS SW TAPE-11
MXHTS85412101
Product TypeBJTs - Bipolar Transistors
USHTS8541210075
Unit Weight0.000282 oz
CNHTS8541210000
Part # Aliases933776000235
Pd - Power Dissipation250 mW
Moisture Sensitivity Level1 (Unlimited)