参数项参数值
参数项参数值
DC Current Gain hFE Max120
Collector- Base Voltage VCBO300 V
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage2 V
DC Collector/Base Gain hfe Min15
MXHTS85412999
KRHTS8541299000
Package / CaseTO-205AD-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
PackagingBulk
CNHTS8541290000
BrandMicrochip / Microsemi
ManufacturerMicrochip
Factory Pack Quantity100
TARIC8541290000
Product CategoryBipolar Transistors - BJT
RoHSN
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT Power BJT
SubcategoryTransistors
Unit Weight0.014110 oz
USHTS8541290095
Pd - Power Dissipation750 mW