参数项参数值
参数项参数值
ConfigurationSingle
KRHTS8541299000
JPHTS8541290100
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
CAHTS8541290000
Transistor PolarityN-Channel
Id - Continuous Drain Current36 A
Minimum Operating Temperature- 55 C
ImageInfineon Technologies BSC320N20NS3 G
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance27 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time22 ns
Package / CaseTDSON-8
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
ManufacturerInfineon
TARIC8541290000
MXHTS85412999
RoHS Details
Qg - Gate Charge22 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time4 ns
Unit Weight0.003527 oz
CNHTS8541290000
Part # AliasesSP000676410 BSC32N2NS3GXT BSC320N20NS3GATMA1
Pd - Power Dissipation125 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time9 ns
TypeOptiMOS 3 Power Transistor