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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min28.5 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current39 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time30 ns
Width4.7 mm
Rds On - Drain-Source Resistance66 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time150 ns
Height16.3 mm
Length10.67 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageON Semiconductor / Fairchild FDP39N20
PackagingTube
SubcategoryMOSFETs
Channel ModeEnhancement
BrandON Semiconductor / Fairchild
Fall Time150 ns
SeriesFDP39N20
Product TypeMOSFET
Factory Pack Quantity1000
ManufacturerON Semiconductor
Unit Weight0.063493 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET SINGLE N-CH 200V ULTRAFET TRENCH
Pd - Power Dissipation251 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time160 ns
TypeMOSFET
Moisture Sensitivity LevelNot Applicable