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SQM120N04-1M7L-GE3

SQM120N04-1M7L-GE3

厂牌：Vishay
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000030086103
描述：AEQC101 N-CHANNEL 40-V (D-S) 175 MOSFET
最新价格近期成交47单+
数量价格（含税）
1¥14.6232
10¥14.0608
100¥13.5200
500¥13.0000
800¥12.4999
1600¥12.2500
库存：2,990货期：1Day起订：1增量：1
数量：
X
14.6232（单价）
合计：
￥14.62
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min212 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current120 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Length10.67 mm
Height4.83 mm
QualificationAEC-Q101
PackagingMouseReel
PackagingReel
PackagingCut Tape
KRHTS8541299000
Typical Turn-On Delay Time15 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
Factory Pack Quantity800
ManufacturerVishay
CAHTS8541290000
Rds On - Drain-Source Resistance1.4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time74 ns
BrandVishay / Siliconix
Package / CaseTO-263-3
TARIC8541290000
Maximum Operating Temperature+ 175 C
Width9.65 mm
Mounting StyleSMD/SMT
RoHS Details
ImageVishay / Siliconix SQM120N04-1m7L_GE3
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 40V 120A 375W AEC-Q101 Qualified
MXHTS85412999
Product TypeMOSFET
SeriesSQ
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.050717 oz
Fall Time12 ns
CNHTS8541290000
Pd - Power Dissipation375 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)