参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current310 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.2 ns
Rds On - Drain-Source Resistance3.5 Ohms
Typical Turn-Off Delay Time13.8 ns
MXHTS85412999
Mounting StyleSMD/SMT
Qg - Gate Charge0.95 nC
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageDiodes Incorporated BSS138K-13
Channel ModeEnhancement
BrandDiodes Incorporated
Fall Time7.6 nS
Product TypeMOSFET
ManufacturerDiodes Incorporated
USHTS8541290095
Unit Weight0.000317 oz
Factory Pack Quantity10000
Product CategoryMOSFET
DescriptionMOSFET BSS Family SOT23 T&R 10K
Pd - Power Dissipation0.54 W
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels1 Channel
Rise Time2.5 ns
Moisture Sensitivity Level1 (Unlimited)