参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max- 40 V
Continuous Collector Current- 0.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
MXHTS85412101
Length1.6 mm
Width0.8 mm
Height0.75 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage- 0.4 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSOT-523-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated MMBT3906T-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT -40V 150mW
SeriesMMBT39
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000071 oz
USHTS8541210075
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)