参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 40 V
Collector- Emitter Voltage VCEO Max- 40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
MXHTS85412101
KRHTS8541219000
Collector-Emitter Saturation Voltage- 0.4 V
DC Collector/Base Gain hfe Min30
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseDFN1006-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated MMBT3906LP-7
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT BIPOLAR TRANS PNP
SeriesMMBT39
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.084658 oz
USHTS8541210075
Pd - Power Dissipation250 mW
Moisture Sensitivity Level1 (Unlimited)