参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min6 S
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
KRHTS8541299000
Transistor PolarityN-Channel
Id - Continuous Drain Current13 A
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Vgs - Gate-Source Voltage- 20 V, + 20 V
ImageInfineon Technologies BSZ900N15NS3GATMA1
Length3.3 mm
Height1.1 mm
Typical Turn-On Delay Time4 ns
DescriptionMOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
Rds On - Drain-Source Resistance74 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time8 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
Package / CaseTSDSON-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width3.3 mm
Mounting StyleSMD/SMT
BrandInfineon Technologies
RoHS Details
Product TypeMOSFET
TARIC8541290000
MXHTS85412999
Qg - Gate Charge7 nC
ManufacturerInfineon
SeriesOptiMOS 3
SubcategoryMOSFETs
USHTS8541290075
Channel ModeEnhancement
Unit Weight0.001349 oz
Fall Time3 ns
CNHTS8541290000
Part # AliasesBSZ900N15NS3 G SP000677866
Pd - Power Dissipation38 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Rise Time4 ns
Moisture Sensitivity Level1 (Unlimited)