IPP60R199CP

IPP60R199CP

厂牌：iscsemi

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000040288808

描述：MOSFET N-CH 650V 16A TO220-3

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current16 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time10 ns

Width4.4 mm

Rds On - Drain-Source Resistance180 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time50 ns

Height15.65 mm

Length10 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleThrough Hole

Qg - Gate Charge43 nC

Package / CaseTO-220-3

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

PackagingTube

TARIC8541290000

RoHS Details

ImageInfineon Technologies IPP60R199CP

Channel ModeEnhancement

SubcategoryMOSFETs

Fall Time5 ns

BrandInfineon Technologies

ManufacturerInfineon

SeriesCoolMOS CE

Factory Pack Quantity500

Unit Weight0.211644 oz

Product CategoryMOSFET

Product TypeMOSFET

USHTS8541290095

DescriptionMOSFET N-Ch 650V 16A TO220-3 CoolMOS CP

Pd - Power Dissipation139 W

Part # AliasesSP000084278 IPP6R199CPXK IPP60R199CPXKSA1

Vds - Drain-Source Breakdown Voltage600 V

TradenameCoolMOS

Number of Channels1 Channel

Rise Time5 ns