IPP60R160C6

厂牌：iscsemi

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000040288817

描述：250806更新

商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current23.8 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time13 ns

Width4.4 mm

Rds On - Drain-Source Resistance140 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time96 ns

Height15.65 mm

Length10 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleThrough Hole

Qg - Gate Charge75 nC

Package / CaseTO-220-3

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

PackagingTube

TARIC8541290000

RoHS Details

ImageInfineon Technologies IPP60R160C6

Channel ModeEnhancement

SubcategoryMOSFETs

Fall Time8 ns

BrandInfineon Technologies

ManufacturerInfineon

SeriesCoolMOS C6

Factory Pack Quantity500

Unit Weight0.211644 oz

Product CategoryMOSFET

Product TypeMOSFET

USHTS8541290095

DescriptionMOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6

Pd - Power Dissipation176 W

Part # AliasesSP000652796 IPP6R16C6XK IPP60R160C6XKSA1

Vds - Drain-Source Breakdown Voltage600 V

TradenameCoolMOS

Number of Channels1 Channel

Rise Time13 ns