IPP60R190P6

IPP60R190P6

厂牌：iscsemi

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000040288830

描述：N-Channel MOSFET Transistor

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3.5 V

TechnologySi

Id - Continuous Drain Current20.2 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time15 ns

Rds On - Drain-Source Resistance190 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time45 ns

Width4.4 mm

MXHTS85412999

Height15.65 mm

Length10 mm

KRHTS8541299000

CNHTS8541290000

Qg - Gate Charge37 nC

Package / CaseTO-220-3

Mounting StyleThrough Hole

JPHTS8541290100

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

Fall Time7 ns

TARIC8541290000

PackagingTube

BrandInfineon Technologies

RoHS Details

ImageInfineon Technologies IPP60R190P6

Product CategoryMOSFET

SeriesCoolMOS P6

Unit Weight0.211644 oz

SubcategoryMOSFETs

ManufacturerInfineon

Factory Pack Quantity500

Product TypeMOSFET

Pd - Power Dissipation151 W

Part # AliasesSP001017066 IPP60R190P6XKSA1

USHTS8541290095

DescriptionMOSFET HIGH POWER_PRC/PRFRM

Vds - Drain-Source Breakdown Voltage600 V

TradenameCoolMOS

Number of Channels1 Channel

Rise Time8 ns