参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current13.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4.4 mm
Rds On - Drain-Source Resistance250 mOhms
Transistor Type1 N-Channel
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingTube
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPP60R280E6
SubcategoryMOSFETs
BrandInfineon Technologies
ManufacturerInfineon
SeriesCoolMOS E6
Factory Pack Quantity500
Unit Weight0.211644 oz
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET N-Ch 650V 13.8A TO220-3 CoolMOS E6
Pd - Power Dissipation104 W
Part # AliasesIPP6R28E6XK SP000797290 IPP60R280E6XKSA1
Vds - Drain-Source Breakdown Voltage600 V
TradenameCoolMOS
Number of Channels1 Channel