参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current270 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4.8 ns
CNHTS8541290000
Rds On - Drain-Source Resistance11 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time17.5 ns
Minimum Operating Temperature- 55 C
Package / CaseSOT-23-3
PackagingReel
PackagingMouseReel
PackagingCut Tape
Mounting StyleSMD/SMT
Qg - Gate Charge3.7 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMN24H11DS-7
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 101V-250V
Channel ModeEnhancement
Fall Time102.3 ns
USHTS8541290095
Unit Weight0.050459 oz
Pd - Power Dissipation1.2 W
Vds - Drain-Source Breakdown Voltage240 V
Number of Channels1 Channel
Rise Time4.7 ns
Moisture Sensitivity Level1 (Unlimited)