SI2319DS-T1-E3

SI2319DS-T1-E3

厂牌：Vishay Siliconix

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000040487047

描述：Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min7 S

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current3 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Minimum Operating Temperature- 55 C

Length2.9 mm

Height1.45 mm

JPHTS8541290100

Typical Turn-On Delay Time7 ns

CAHTS8541290000

Rds On - Drain-Source Resistance82 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time25 ns

Package / CaseSOT-23-3

RoHS Details

ImageVishay Semiconductors SI2319DS-T1-E3

Factory Pack Quantity3000

PackagingReel

PackagingCut Tape

PackagingMouseReel

Maximum Operating Temperature+ 150 C

Width1.6 mm

TARIC8541290000

ManufacturerVishay

BrandVishay Semiconductors

SubcategoryMOSFETs

Mounting StyleSMD/SMT

Product CategoryMOSFET

DescriptionMOSFET 40V 3.0A 1.25W 82 mohms @ 10V

Qg - Gate Charge17 nC

MXHTS85412999

SeriesSI2

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.000282 oz

Fall Time25 ns

CNHTS8541290000

Part # AliasesSI2319DS-E3

Pd - Power Dissipation1.25 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time15 ns

Moisture Sensitivity Level1 (Unlimited)