SI2319DS-T1-BE3

SI2319DS-T1-BE3

厂牌：Vishay Siliconix

包装：Cut Tape (CT) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000040487054

描述：P-CHANNEL 40-V (D-S) MOSFET

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商品参数

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参数项参数值

PackagingCut Tape (CT)

Package / CaseTO-236-3, SC-59, SOT-23-3

Mounting TypeSurface Mount

Operating Temperature-55°C ~ 150°C (TJ)

TechnologyMOSFET (Metal Oxide)

FET TypeP-Channel

Current - Continuous Drain (Id) @ 25°C2.3A (Ta)

Rds On (Max) @ Id, Vgs82mOhm @ 3A, 10V

FET Feature-

Power Dissipation (Max)750mW (Ta)

Vgs(th) (Max) @ Id3V @ 250µA

Supplier Device PackageSOT-23-3 (TO-236)

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Vgs (Max)±20V

Drain to Source Voltage (Vdss)40 V

Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds470 pF @ 20 V

Moisture Sensitivity Level1 (Unlimited)