参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 10 mA, 2 V
Gain Bandwidth Product fT280 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max15 V
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min200 at 10 mA, 2 V, 150 at 100 mA, 2 V, 90 at 500 mA, 2 V
Width1.3 mm
Height0.6 mm
Length1.7 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-666-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.000099 oz
ImageNexperia PBSS3515VS,115
BrandNexperia
Pd - Power Dissipation200 mW
ManufacturerNexperia
Part # Aliases934056767115
Factory Pack Quantity4000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT TRANS BISS TAPE-7
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)