参数项参数值
参数项参数值
Gain Bandwidth Product fT340 MHz
Collector- Base Voltage VCBO- 15 V
Maximum DC Collector Current- 1 A
Collector- Emitter Voltage VCEO Max- 15 V
Continuous Collector Current- 500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min200 at - 10 mA, - 2 V
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseX1-DFN1006-3
PackagingReel
PackagingCut Tape
BrandDiodes Incorporated
TARIC8541210000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT SS Low Sat Transist
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
USHTS8541210095
Pd - Power Dissipation400 mW
Moisture Sensitivity Level1 (Unlimited)