参数项参数值
参数项参数值
Gain Bandwidth Product fT340 MHz
Collector- Base Voltage VCBO- 15 V
Maximum DC Collector Current- 1 A
Collector- Emitter Voltage VCEO Max- 15 V
Continuous Collector Current- 500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
MXHTS85412101
CNHTS8541210000
KRHTS8541219000
DC Collector/Base Gain hfe Min90 at - 500 mA, - 2 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingReel
PackagingMouseReel
Package / CaseDFN1006-3
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DSS3515M-7B
Factory Pack Quantity10000
SeriesDSS35
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT SS Low Sat Transisto X1-DFN1006-3,10K
USHTS8541210095
Unit Weight0.317466 oz
Pd - Power Dissipation250 mW
Moisture Sensitivity Level1 (Unlimited)