参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 55 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max- 35 V
Continuous Collector Current- 2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Width1.5 mm
Collector-Emitter Saturation Voltage- 0.26 V
Height0.94 mm
Length3 mm
Mounting StyleSMD/SMT
Package / CaseTSOP-6
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
RoHS Details
ImageON Semiconductor NSS35200MR6T1G
PackagingReel
PackagingMouseReel
PackagingCut Tape
SubcategoryTransistors
BrandON Semiconductor
ManufacturerON Semiconductor
SeriesNSS35200MR6T1G
Unit Weight0.000705 oz
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 2A 35V Low VCEsat
Pd - Power Dissipation625 mW
Moisture Sensitivity Level1 (Unlimited)