参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current- 1 A
Collector- Emitter Voltage VCEO Max- 40 V
Continuous Collector Current- 500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
MXHTS85412101
Emitter- Base Voltage VEBO- 6 V
KRHTS8541219000
Collector-Emitter Saturation Voltage- 350 mV
DC Collector/Base Gain hfe Min40 at - 500 mA, - 2 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseDFN1006-3
CAHTS8541210000
CNHTS8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Factory Pack Quantity10000
ImageDiodes Incorporated DSS3540M-7B
PackagingMouseReel
PackagingReel
PackagingCut Tape
Product TypeBJTs - Bipolar Transistors
BrandDiodes Incorporated
DescriptionBipolar Transistors - BJT SS Low Sat Transisto X1-DFN1006-3,10K
TARIC8541210000
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesDSS35
SubcategoryTransistors
ManufacturerDiodes Incorporated
Unit Weight0.317466 oz
USHTS8541210095
Pd - Power Dissipation250 mW
Moisture Sensitivity Level1 (Unlimited)