参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current150 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
ManufacturerToshiba
PackagingCut Tape
PackagingMouseReel
PackagingReel
Typical Turn-On Delay Time21 ns
Factory Pack Quantity5000
Minimum Operating Temperature- 55 C
BrandToshiba
Rds On - Drain-Source Resistance3.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time68 ns
Package / CaseSOP-8
TARIC8541290000
Maximum Operating Temperature+ 175 C
Mounting StyleSMD/SMT
RoHS Details
ImageToshiba TPH3R70APL,L1Q
Qg - Gate Charge67 nC
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET PWR MOS PD=170W F=1MHZ
Product TypeMOSFET
SeriesTPH3R70APL
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.003069 oz
Fall Time19 ns
CNHTS8541210000
Pd - Power Dissipation170 W
TradenameU-MOSIX-H
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)