参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current33 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance34 mOhms
Transistor Type1 N-Channel
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge26 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRFR4615TRLPBF
TARIC8541290000
RoHS Details
Unit Weight0.139332 oz
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation144 W
BrandInfineon / IR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT 150V 33A 42mOhm 26nC Qg
Vds - Drain-Source Breakdown Voltage150 V
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)