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SIS443DN-T1-GE3
厂牌：Vishay Siliconix
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000040871756
描述：
MOSFET P-CH 40V 35A PPAK 1212-8
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min50 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current35 A
Vgs - Gate-Source Voltage- 10 V, + 10 V
KRHTS8541299000
JPHTS8541290100
Typical Turn-On Delay Time12 ns, 45 NS
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance11.7 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time48 ns,50 NS
RoHS Details
Package / CasePowerPAK-1212-8
Factory Pack Quantity3000
ImageVishay Semiconductors SIS443DN-T1-GE3
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 150 C
BrandVishay Semiconductors
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerVishay
SubcategoryMOSFETs
DescriptionMOSFET -40V Vds 20V Vgs PowerPAK 1212-8
Product CategoryMOSFET
Qg - Gate Charge90 nC
MXHTS85412999
SeriesSIS
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.011976 oz
Fall Time10 ns, 12 ns
CNHTS8541290000
Pd - Power Dissipation52 W
TradenameTrenchFET, PowerPAK
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time10 ns, 40 ns
Moisture Sensitivity Level1 (Unlimited)