参数项参数值
参数项参数值
Forward Transconductance - Min18 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current29 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance28.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time9 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge21 nC
CNHTS8541290000
Package / CasePowerPAK-SO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Fall Time21 ns
TARIC8541290000
RoHS Details
ImageVishay Semiconductors SIR632DP-T1-RE3
SeriesSIR
BrandVishay Semiconductors
Unit Weight0.017870 oz
Product TypeMOSFET
Factory Pack Quantity3000
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerVishay
Pd - Power Dissipation69.5 W
DescriptionMOSFET 150V Vds 20V Vgs PowerPAK SO-8
USHTS8541290095
Vds - Drain-Source Breakdown Voltage150 V
TradenameTrenchFET, PowerPAK
Number of Channels1 Channel
Rise Time27 ns
Moisture Sensitivity Level1 (Unlimited)