参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current200 mA
ConfigurationDual
Factory Pack Quantity5000
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
BrandNexperia
PackagingCut Tape
PackagingReel
RoHS Details
Collector-Emitter Saturation Voltage120 mV
Maximum Operating Temperature+ 150 C
TARIC8541210000
DC Collector/Base Gain hfe Min100
Minimum Operating Temperature- 55 C
SubcategoryTransistors
Package / CaseDFN-1412-6
ManufacturerNexperia
Product TypeBJTs - Bipolar Transistors
Mounting StyleSMD/SMT
ImageNexperia PMBT3904RAZ
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT TRANS BIPOLAR
USHTS8541210075
Unit Weight0.000083 oz
CNHTS8541210000
Part # Aliases934660464147
Pd - Power Dissipation480 mW
Moisture Sensitivity Level1 (Unlimited)