参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min20 S
KRHTS8541299000
JPHTS8541290100
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
CAHTS8541290000
Transistor PolarityN-Channel
Id - Continuous Drain Current56 A
ImageInfineon Technologies BSC160N15NS5ATMA1
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET TRENCH >=100V
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time9.6 ns
Rds On - Drain-Source Resistance16 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time10.8 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Package / CaseTDSON-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
ManufacturerInfineon
SeriesOptiMOS 5
MXHTS85412999
TARIC8541290000
RoHS Details
Qg - Gate Charge19 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time2.6 ns
Unit Weight0.003880 oz
CNHTS8541290000
Part # AliasesBSC160N15NS5 SP001181422
Pd - Power Dissipation96 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Rise Time3 ns
Moisture Sensitivity Level1 (Unlimited)