参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.7 V
DC Collector/Base Gain hfe Min40
MXHTS85412101
KRHTS8541219000
Package / CaseSC-70-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541210000
Unit Weight0.000212 oz
RoHS Details
Pd - Power Dissipation460 mW
ImageON Semiconductor BC817-40WT1G
SeriesBC817-40W
Factory Pack Quantity3000
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors
USHTS8541210095
DescriptionBipolar Transistors - BJT SS SC70 GP XSTR NPN
Moisture Sensitivity Level1 (Unlimited)