参数项参数值
参数项参数值
DC Current Gain hFE Max150
Gain Bandwidth Product fT10 MHz
Collector- Base Voltage VCBO350 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max250 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Length10.4 mm
Height9.15 mm
RoHS Details
Factory Pack Quantity1000
PackagingTube
BrandSTMicroelectronics
KRHTS8541299000
Collector-Emitter Saturation Voltage1 V
Maximum Operating Temperature+ 150 C
ManufacturerSTMicroelectronics
TARIC8541290000
Package / CaseTO-220-3
Minimum Operating Temperature- 65 C
JPHTS8541290100
DC Collector/Base Gain hfe Min30
CAHTS8541290000
SubcategoryTransistors
Width4.6 mm
SeriesTIP47
Mounting StyleThrough Hole
Product TypeBJTs - Bipolar Transistors
ImageSTMicroelectronics TIP47
Product CategoryBipolar Transistors - BJT
MXHTS85412999
DescriptionBipolar Transistors - BJT NPN Gen Pur Power
USHTS8541290095
Unit Weight0.211644 oz
CNHTS8541290000
Pd - Power Dissipation40 W