参数项参数值
参数项参数值
DC Current Gain hFE Max150
Gain Bandwidth Product fT10 MHz
Collector- Base Voltage VCBO450 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max350 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Length10.67 mm
Height9.4 mm
ManufacturerON Semiconductor
KRHTS8541299000
PackagingBulk
Factory Pack Quantity1200
Minimum Operating Temperature- 65 C
JPHTS8541290100
BrandON Semiconductor / Fairchild
CAHTS8541290000
Package / CaseTO-220-3
DC Collector/Base Gain hfe Min30
TARIC8541290000
Maximum Operating Temperature+ 150 C
Width4.83 mm
Mounting StyleThrough Hole
RoHS Details
ImageON Semiconductor / Fairchild TIP49
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN Power Transistor 350V/1a
Product TypeBJTs - Bipolar Transistors
MXHTS85412999
SeriesTIP49
USHTS8541290095
Unit Weight0.042823 oz
CNHTS8541290000
Pd - Power Dissipation40 W