参数项参数值
参数项参数值
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current8 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current8 A
ConfigurationSingle
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Length6.73 mm
Width6.22 mm
Height2.38 mm
Maximum Collector Cut-off Current10 uA
DC Collector/Base Gain hfe Min100, 1000
Minimum Operating Temperature- 65 C
Package / CaseTO-252-3 (DPAK)
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Factory Pack Quantity2500
ImageON Semiconductor MJD127T4G
PackagingReel
PackagingCut Tape
PackagingMouseReel
Product TypeDarlington Transistors
BrandON Semiconductor
DescriptionDarlington Transistors 8A 100V Bipolar Power PNP
Product CategoryDarlington Transistors
RoHS Details
SeriesMJD127
SubcategoryTransistors
ManufacturerON Semiconductor
Unit Weight0.015873 oz
Pd - Power Dissipation20 W
Moisture Sensitivity Level1 (Unlimited)