参数项参数值
参数项参数值
DC Current Gain hFE Max500 at - 100 mA, - 2 V
Gain Bandwidth Product fT430 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min200 at - 100 mA, - 2 V
MXHTS85412999
CNHTS8541290000
KRHTS8541299000
Package / CaseSC-62-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
Product CategoryBipolar Transistors - BJT
ImageROHM Semiconductor 2SAR512P5T100
Series2SxR
SubcategoryTransistors
Factory Pack Quantity1000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
Part # Aliases2SAR512P5
USHTS8541290095
DescriptionBipolar Transistors - BJT PNP -30V Vceo -2A Ic MPT3
Moisture Sensitivity Level1 (Unlimited)