参数项参数值
参数项参数值
DC Current Gain hFE Max680 at - 100 mA, - 2 V
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current- 1 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 150 mV
DC Collector/Base Gain hfe Min270 at - 100 mA, - 2 V
MXHTS85412999
KRHTS8541299000
Package / CaseSC-62-3
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Factory Pack Quantity1000
CNHTS8541290000
DescriptionBipolar Transistors - BJT PNP -30V Vceo -1A Ic MPT3
BrandROHM Semiconductor
ImageROHM Semiconductor 2SAR293P5T100
Product TypeBJTs - Bipolar Transistors
Series2SxR
TARIC8541290000
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.027484 oz
SubcategoryTransistors
Part # Aliases2SAR293P5
Pd - Power Dissipation500 mW
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)