参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT520 MHz
Collector- Base Voltage VCBO- 30 V
Maximum DC Collector Current- 1 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 150 mV
DC Collector/Base Gain hfe Min200
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor 2SAR502U3HZGT106
BrandROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation200 mW
DescriptionBipolar Transistors - BJT TRANS DIGITAL PNP
Moisture Sensitivity Level1 (Unlimited)